?2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
MBRP3010N
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
T
C=25°°°°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics (per diode)
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Symbol Parameter Value Units
VRRM
Maximum Repetitive Reverse Voltage 100 V
VR
Maximum DC Reverse Voltage 100 V
IF(AV)
Average Rectified Forward Current @ TC
= 105
°C30 A
IFSM
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
250 A
TJ, TSTG
Operating Junction and Storage Temperature -65 to +150
°C
Symbol Parameter Value Units
RθJC
Maximum Thermal Resistance, Junction to Case (per diode) 1.7
°C/W
Symbol Parameter Value Units
VFM *
Maximum Instantaneous Forward Voltage
IF
= 15A
IF
= 15A
IF
= 30A
IF
= 30A
TC
= 25
°C
0.85
TC
= 125
°C
0.67
TC
= 25
°C
1.05(TYP.)
TC
= 125
°C
0.80
V
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
T
C
= 25
°
C
1
TC
= 125
°C
20
mA
MBRP3010N
Features
? Low forward voltage drop
? High frequency properties and switching speed
? Guard ring for over-voltage protection
Applications
? Switched mode power supply
? Freewheeling diodes
TO-220
1 2 3
1. Anode 2.Cathode 3. Anode